发明名称 RESIST COMPOSITION AND RESIST PATTERN MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition which can manufacture a resist pattern with excellent focus margin (DOF). <P>SOLUTION: A resist composition contains a resin having a structural unit represented by formula (a), an acid generator represented by formula (B1), and a solvent, where R<SP POS="POST">2</SP>represents an aliphatic hydrocarbon group or the like which may have a substituent; R<SP POS="POST">3</SP>represents a sulpholane ring group represented by formula (b); R represents a hydroxy group, an alkoxy group or an aliphatic hydrocarbon group; and * represents a direct bond to R<SP POS="POST">2</SP>. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012168497(A) 申请公布日期 2012.09.06
申请号 JP20110121469 申请日期 2011.05.31
申请人 SUMITOMO CHEMICAL CO LTD 发明人 KAWAMURA MAKI;KIN KYOCHU
分类号 G03F7/039;C07D333/48;C08F20/38;G03F7/004;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址