METHOD OF MANUFACTURING RERAM OF THREE-DIMENSIONAL STACKED MEMORY TYPE HAVING INDEPENDENT MEMORY CELL STRUCTURE
摘要
<p>PURPOSE: A method of manufacturing a ReRAM(Resistive Random Access Memory) device of a three-dimensional stacked memory type having an independent memory cell structure is provided to prevent cross talk between memory cells by insulating a gap between metal oxides having resistance switching characteristics. CONSTITUTION: A silicon substrate(10) is provided. An insulating material layer(20) is formed on the substrate. A bottom electrode layer(30) is formed on an upper portion of the insulating material layer. A metal oxide(40) is formed on the upper portion of the substrate. An upper electrode(50) is formed on the upper portion of a top insulating material layer.</p>
申请公布号
KR20120097595(A)
申请公布日期
2012.09.05
申请号
KR20110016890
申请日期
2011.02.25
申请人
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
发明人
KO, DAE HONG;SOHN, HYUN CHUL;CHO, MANN HO;LEE, DOO SUNG;KIM, JONG GI