发明名称 |
Chemical mechanical polishing slurry useful for copper substrates |
摘要 |
A chemical mechanical polishing slurry precursor composition comprising urea and at least one metal oxide abrasive. Also disclosed is a method for polishing a substrate including at least one metal layer comprising the steps of: (a) admixing such a precursor composition and deionized water to form a chemical mechanical polishing slurry precursor composition; (b) admixing the precursor composition of step (a) with hydrogen peroxide to form a chemical mechanical polishing slurry composition; (c) applying the chemical mechanical polishing slurry composition of step (b) to the substrate; and (d) removing at least a portion of the metal layer from the substrate by bringing a pad into contact with the substrate and moving the pad in relation to the substrate. |
申请公布号 |
EP1559762(B1) |
申请公布日期 |
2012.09.05 |
申请号 |
EP20050004891 |
申请日期 |
1997.12.05 |
申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
KAUFMAN, VLASTA BRUSIC;KISTLER, RODNEY C.;WANG, SHUMIN |
分类号 |
C09G1/02;C09K3/14;C09K13/06;C23F3/06;H01L21/304;H01L21/306;H01L21/321 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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