CAPACITOR-LESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A capacitor-less memory device and a manufacturing method thereof are provided to secure enough capacitance without increasing the height of the device by manufacturing the overall height of the device as an original thickness of a semiconductor substrate. CONSTITUTION: A plurality of bit lines(200) is formed on a semiconductor substrate(100) to be extended in one direction. A plurality of word lines(300) is extended in the orthogonal direction to the direction of the bit line. A plurality of cells(400) is formed by penetrating from the bit line to the word line. A source plate(500) is formed on the whole area including cells. A back bias plate(600) is formed on the upper part of the source plate.