IZTO TRANSPARENT THIN FILM TRANSISTOR

摘要

PURPOSE: An IZTO(Indium Zinc Tin Oxide) transparent thin film transistor is provided to prevent a delamination phenomenon caused by thermal expansion coefficient difference by forming a transparent conductive IZTO thin film in magnetron sputter. CONSTITUTION: A moisture transmission prevention film(110) is formed on the top of a flexible substrate(100). A source layer(121) and a drain layer(122) are formed on the top of the moisture transmission prevention film. A channel layer(130) is formed on the top of the moisture transmission prevention film into an IZTO thin film. A gate insulating layer(140) is formed surrounding the source layer, the drain layer, and the channel layer. A gate electrode layer(150) is formed on the top of the gate insulating layer.