| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent an abnormal contact hole by easily forming a capping layer on the surface of a photoresist pattern using freezing materials. CONSTITUTION: A photoresist layer is formed on a substrate(31). Light with a second intensity(203) is emitted to a non-exposure region of the photoresist layer. The second intensity is smaller than a first intensity of light emitted to an exposure region of the photoresist layer. A photoresist pattern is formed by removing an exposure region of the photoresist layer. A capping layer is formed on the surface of a photoresist pattern. [Reference numerals] (AA) Second region; (BB) First region
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