METHOD OF MANUFACTURING RERAM OF THREE-DIMENSIONAL STACKED MEMORY TYPE HAVING INDEPENDENT MEMORY CELL STRUCTURE AND THE THREE-DIMENSIONAL STACKED MEMORY

摘要

PURPOSE: A method of manufacturing a resistive random access memory device of a three-dimensional stacked memory type having an independent memory cell structure and the three-dimensional stacked memory are provided to control a limit to miniaturization by producing the resistive random access memory device of a three-dimensional stacked memory structure. CONSTITUTION: A silicon substrate(10) is provided. An insulating material layer(20) is deposited on the top of the substrate. A bottom electrode layer(30) is deposited on the insulating material layer. A metal oxide(40) having resistive switching characteristics is deposited on the substrate. An upper electrode(50) is formed on a top insulating material layer.