发明名称 IN-SITU MEASURMENT APPARATUS FOR FILM THICKNESS USING IMPEDANCE, IN-SITU MEASURMENT METHOD THEREFOR AND RECORDING MEDIUM OF THE SAME METHOD
摘要 PURPOSE: An apparatus and a method for measuring the thickness of an in-situ thin film using impedance and a recording medium thereof are provided to skip a special deposition thickness check process since the thin film deposition thickness is measured in real time under an in-situ situation. CONSTITUTION: A substrate(30) is installed in a chamber(10). Plasma gas(20) includes a sheath layer. A source RF power(40) applies source power to the chamber. A bias RF power(50) applies bias power to the substrate. An impedance measurement unit(60) measures a measurement impedance in real time. A display unit(90) displays the thickness of a thin film(70) measured in a thickness calculation unit(80) for a user. [Reference numerals] (30) Substrate; (44) Matching circuit for source; (52) Matching circuit for bias; (60) Impedance measurement unit; (80) Calculation unit; (90) Display unit
申请公布号 KR20120098255(A) 申请公布日期 2012.09.05
申请号 KR20110018096 申请日期 2011.02.28
申请人 RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY 发明人 CHAE, HEE YEOP;KIM, DAE KYOUNG
分类号 H01L21/66;H01L21/205;H05H1/46 主分类号 H01L21/66
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