| 摘要 |
<p>Disclosed is a solar cell wherein generation of internal stress is reduced, thereby reducing crystal defects and recombination loss. Specifically disclosed is a solar cell having an antireflective film and an external lead-out electrode on the light-receiving side of a semiconductor substrate that is provided with a p-n junction, while comprising an electrode layer on the non-light-receiving side of the semiconductor substrate. The solar cell is characterized in that the electrode layer is in the form of a solid layer and has a thickness of not more than 5 µm. It is preferable that the electrode layer has a sheet resistance of not more than 1 × 10 -4 ©/.</p> |
