METEOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to prevent the reduction of a wiring line width in an oxide area by selectively forming an oxide film on only both walls of a storage node contact plug. CONSTITUTION: A storage node contact is formed on a substrate(21). A damascene pattern(31) exposing a bit line contact node is formed. A bit line spacer(33) is formed on the side wall of the damascene pattern. An oxide film is formed by carrying out an oxidation process on the side wall of the damascene pattern of the storage contact node. A bit line(34) is formed in the damascene pattern including the oxidation film.