发明名称 SEMICONDUCTOR DEVICE
摘要 An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.
申请公布号 EP2494599(A1) 申请公布日期 2012.09.05
申请号 EP20100826620 申请日期 2010.10.15
申请人 SEMICONDUCTOR ENERGY LABORATORY CO. LTD. 发明人 YAMAZAKI, SHUNPEI;KOYAMA, JUN;KATO, KIYOSHI
分类号 H01L27/105;G11C11/405;G11C16/04;H01L21/822;H01L21/8242;H01L27/06;H01L27/108;H01L27/115;H01L27/118;H01L27/12;H01L29/78;H01L29/786 主分类号 H01L27/105
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