发明名称 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM
摘要 <p>PURPOSE: A pattern forming method, an active ray-sensitive or radiation ray-sensitive resin composition for the method, and a resist film formed by the same are provided to improve exposure latitude and line width roughness. CONSTITUTION: A pattern forming method includes the following: a film is formed by using an active ray-sensitive or radiation ray-sensitive resin composition; the film is exposed; and a developer containing an organic solvent develops the exposed film. The active ray-sensitive or radiation ray-sensitive resin composition contains a resin. The resin includes a repeating unit with a group generating a polar group by the action of acid and a repeating unit represented by chemical formula I or II. In chemical formula I and II, R11 and R21 are respectively hydrogen atoms or alkyl groups; R12 and R22 are respectively alkyl groups, cycloalkyl groups, alkoxy groups, alkoxy carbonyl groups, carboxyl groups, halogen atoms, hydroxyl groups, or cyano groups. R13 and R23 are respectively alkylene groups, cycloalkylene groups, or the combination of the same; Y1 and Y2 are respectively single bonds, ether bonds, ester bonds, amide bonds, urethane bonds, or ureylene bonds; and X1 and X2 are respectively methylene groups, methyl methylene groups, dimethyl methylene groups, ethylene groups, oxygen atoms, or sulfur atoms.</p>
申请公布号 KR20120098416(A) 申请公布日期 2012.09.05
申请号 KR20120011570 申请日期 2012.02.06
申请人 FUJIFILM CORPORATION 发明人 KATAOKA SHOHEI;TAKAHASHI HIDENORI;YAMAGUCHI SHUHEI;SAITOH SHOICHI;SHIRAKAWA MICHIHIRO;YOSHINO FUMIHIRO
分类号 G03F7/26;G03F7/00;G03F7/004;G03F7/32 主分类号 G03F7/26
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