发明名称 |
DRY ETCHING APPARATUS USING WAVE |
摘要 |
PURPOSE: A dry etching apparatus using waves is provided to easily discharge an etching by-product of an etched sacrificial layer to the outside by vibrating a vacuum chamber and a holder with an ultrasonic frequency when the sacrificial layer between a substrate and an element is removed. CONSTITUTION: A holder(120) is formed in a vacuum chamber(110). A peeled object(130) is composed of a substrate(131) and an element(137). A sacrificial layer(135) is formed between the substrate and the element. The sacrificial layer is etched by etching gas flowing into the vacuum chamber. A wave generator(140) is attached in the vacuum chamber and vibrates with a sound wave or an ultrasonic frequency. [Reference numerals] (AA) Etching gas
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申请公布号 |
KR20120098175(A) |
申请公布日期 |
2012.09.05 |
申请号 |
KR20110017949 |
申请日期 |
2011.02.28 |
申请人 |
SNTEK CO., LTD. |
发明人 |
BAEK, JU YEOUL;PARK, KANG IL;AN, KYOUNG JOON;BAE, JEONG WOON |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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