发明名称 Semiconductor laser device and method of fabricating the same
摘要 A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.
申请公布号 US8258048(B2) 申请公布日期 2012.09.04
申请号 US20090492517 申请日期 2009.06.26
申请人 YAMAGUCHI TSUTOMU;HATA MASAYUKI;KANO TAKASHI;SHONO MASAYUKI;OHBO HIROKI;NOMURA YASUHIKO;IZU HIROAKI;SANYO ELECTRIC CO., LTD. 发明人 YAMAGUCHI TSUTOMU;HATA MASAYUKI;KANO TAKASHI;SHONO MASAYUKI;OHBO HIROKI;NOMURA YASUHIKO;IZU HIROAKI
分类号 H01L21/20;H01S5/02;H01S5/22 主分类号 H01L21/20
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