发明名称 |
Semiconductor laser device and method of fabricating the same |
摘要 |
A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.
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申请公布号 |
US8258048(B2) |
申请公布日期 |
2012.09.04 |
申请号 |
US20090492517 |
申请日期 |
2009.06.26 |
申请人 |
YAMAGUCHI TSUTOMU;HATA MASAYUKI;KANO TAKASHI;SHONO MASAYUKI;OHBO HIROKI;NOMURA YASUHIKO;IZU HIROAKI;SANYO ELECTRIC CO., LTD. |
发明人 |
YAMAGUCHI TSUTOMU;HATA MASAYUKI;KANO TAKASHI;SHONO MASAYUKI;OHBO HIROKI;NOMURA YASUHIKO;IZU HIROAKI |
分类号 |
H01L21/20;H01S5/02;H01S5/22 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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