发明名称 |
Semiconductor device having tri-gate structure and manufacturing method thereof |
摘要 |
A semiconductor device of an example of the invention comprises a memory cell and a select gate transistor provided for the memory cell. A gate electrode of the select gate transistor has a Tri-gate structure in which an upper surface of a gate insulating film formed above a channel of the select gate transistor is set higher than a portion of an upper surface of an element isolation region of the select gate transistor. |
申请公布号 |
US8258562(B2) |
申请公布日期 |
2012.09.04 |
申请号 |
US20090470030 |
申请日期 |
2009.05.21 |
申请人 |
IZUMIDA TAKASHI;KANEMURA TAKAHISA;AOKI NOBUTOSHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
IZUMIDA TAKASHI;KANEMURA TAKAHISA;AOKI NOBUTOSHI |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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