| 摘要 |
<p>It is an object to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring, a second wiring, a third wiring, a fourth wiring, a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, and a second transistor including a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided over a substrate including a semiconductor material, and the second transistor includes an oxide semiconductor layer.</p> |
