发明名称 |
Method of manufacturing silicon carbide semiconductor device |
摘要 |
A method of manufacturing a silicon carbide semiconductor device according to the present invention includes the steps of (a) forming an implantation mask made up of a plurality of unit masks on a silicon carbide semiconductor layer, and (b) implanting predetermined ion in the silicon carbide semiconductor layer at a predetermined implantation energy by using the implantation mask. In the step (a), the implantation mask is formed such that a length from any point in the unit mask to an end of the unit mask can be equal to or less than a scattering length obtained when the predetermined ion is implanted in silicon carbide at the predetermined implantation energy and the implantation mask can have a plurality of regions different from each other in terms of a size and an arrangement interval of the unit masks. |
申请公布号 |
US8258052(B2) |
申请公布日期 |
2012.09.04 |
申请号 |
US20100899061 |
申请日期 |
2010.10.06 |
申请人 |
OKUNO KOJI;TARUI YOICHIRO;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
OKUNO KOJI;TARUI YOICHIRO |
分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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