发明名称 Method of manufacturing a power transistor module and package with integrated bus bar
摘要 According to an embodiment of a method of manufacturing a power transistor module, the method includes mechanically fastening a first terminal, a second terminal and at least two different DC bias terminals to an electrically conductive flange; connecting the flange to a source of a power transistor device; electrically connecting the first terminal to a gate of the power transistor device; electrically connecting the second terminal to a drain of the power transistor device; mechanically fastening a bus bar to the flange which extends between and connects the DC bias terminals; and electrically connecting the bus bar to the drain via one or more RF grounded connections.
申请公布号 US8258014(B2) 申请公布日期 2012.09.04
申请号 US201113174048 申请日期 2011.06.30
申请人 BLAIR CYNTHIA;FOWLKES DONALD;INFINEON TECHNOLOGIES AG 发明人 BLAIR CYNTHIA;FOWLKES DONALD
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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