发明名称 |
Method of manufacturing a power transistor module and package with integrated bus bar |
摘要 |
According to an embodiment of a method of manufacturing a power transistor module, the method includes mechanically fastening a first terminal, a second terminal and at least two different DC bias terminals to an electrically conductive flange; connecting the flange to a source of a power transistor device; electrically connecting the first terminal to a gate of the power transistor device; electrically connecting the second terminal to a drain of the power transistor device; mechanically fastening a bus bar to the flange which extends between and connects the DC bias terminals; and electrically connecting the bus bar to the drain via one or more RF grounded connections. |
申请公布号 |
US8258014(B2) |
申请公布日期 |
2012.09.04 |
申请号 |
US201113174048 |
申请日期 |
2011.06.30 |
申请人 |
BLAIR CYNTHIA;FOWLKES DONALD;INFINEON TECHNOLOGIES AG |
发明人 |
BLAIR CYNTHIA;FOWLKES DONALD |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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