发明名称 Non-volatile semiconductor memory comprising power fail circuitry for flushing write data in response to a power fail signal
摘要 A non-volatile semiconductor memory is disclosed comprising a first memory device having a memory array including a plurality of memory segments, and a data register for storing write data prior to being written to one of the memory segments. A memory controller comprises a microprocessor for executing access commands received from a host. Interface circuitry generates control signals that enable the microprocessor to communicate with the first memory device. Power fail circuitry transmits a flush command to the first memory device through the interface circuitry in response to a power fail signal, wherein the first memory device responds to the flush command by transferring the write data stored in the data register to the memory segment.
申请公布号 US8261012(B2) 申请公布日期 2012.09.04
申请号 US20090610073 申请日期 2009.10.30
申请人 KAN ALAN CHINGTAO;WESTERN DIGITAL TECHNOLOGIES, INC. 发明人 KAN ALAN CHINGTAO
分类号 G06F12/16;G06F11/16 主分类号 G06F12/16
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