发明名称 |
Plasma doping device with gate shutter |
摘要 |
In a plasma doping device according to the invention, a vacuum chamber (1) is evacuated with a turbo-molecular pump (3) as an exhaust device via a exhaust port 11 while a predetermined gas is being introduced from a gas supply device (2) in order to maintain the inside of the vacuum chamber (1) to a predetermined pressure with a pressure regulating valve (4). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source (5) to a coil (8) provided in the vicinity of a dielectric window (7) opposed to a sample electrode (6) to generate inductive-coupling plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying a high-frequency power to the sample electrode (6) is provided. Uniformity of processing is enhanced by driving a gate shutter (18) and covering a through gate (16). |
申请公布号 |
US8257501(B2) |
申请公布日期 |
2012.09.04 |
申请号 |
US20060887323 |
申请日期 |
2006.03.29 |
申请人 |
OKUMURA TOMOHIRO;SASAKI YUICHIRO;OKASHITA KATSUMI;MIZUNO BUNJI;ITO HIROYUKI;NAKAYAMA ICHIRO;JIN CHENG-GUO;PANASONIC CORPORATION |
发明人 |
OKUMURA TOMOHIRO;SASAKI YUICHIRO;OKASHITA KATSUMI;MIZUNO BUNJI;ITO HIROYUKI;NAKAYAMA ICHIRO;JIN CHENG-GUO |
分类号 |
C23C16/00 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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