发明名称 |
Use of a metal complex as an n-Dopant for an organic semiconducting matrix material, organic of semiconducting material and electronic component, and also a dopant and ligand and process for producing same |
摘要 |
A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form aπcomplex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided.
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申请公布号 |
US8258501(B2) |
申请公布日期 |
2012.09.04 |
申请号 |
US20050585215 |
申请日期 |
2005.03.03 |
申请人 |
WERNER ANSGAR;KUEHL OLAF;GESSLER SIMON;HARTMANN HORST;GRUESSING ANDRE;LIMMERT MICHAEL;LUX ANDREA;HARADA KENTARO;NOVALED AG |
发明人 |
WERNER ANSGAR;KUEHL OLAF;GESSLER SIMON;HARTMANN HORST;GRUESSING ANDRE;LIMMERT MICHAEL;LUX ANDREA;HARADA KENTARO |
分类号 |
H01L35/24;C07F5/02;C07F11/00;C09K11/06;H01L51/00;H01L51/30;H01L51/50 |
主分类号 |
H01L35/24 |
代理机构 |
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地址 |
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