发明名称 |
Light emitting diode device having uniform current distribution |
摘要 |
Embodiments of the present disclosure relate to a novel semiconductor. In one aspect, the semiconductor may include a transparent layer having a first surface, a first doped layer, a second doped layer, and an active layer. The first doped layer may be formed over the first surface of the transparent layer and have a plurality of first-type electrodes formed thereon. The second doped layer may be formed over the first surface of the transparent layer and have a plurality of second-type electrodes formed thereon. The active layer may be formed between the first doped layer and the second doped layer. A distance between at least one of the first-type electrodes and a nearest other one of the first-type electrodes may be greater than each of respective distances between the at least one of the first-type electrodes and more than two of the second-type electrodes. |
申请公布号 |
US8258519(B2) |
申请公布日期 |
2012.09.04 |
申请号 |
US201113090881 |
申请日期 |
2011.04.20 |
申请人 |
HSU CHIN-YUAN;EVERLIGHT ELECTRONICS CO., LTD. |
发明人 |
HSU CHIN-YUAN |
分类号 |
H01L27/15;H01L29/06;H01L29/22;H01L29/26;H01L29/732;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;H01L31/12;H01L33/00 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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