| 摘要 |
A nonvolatile semiconductor memory apparatus (10) of the present invention comprises a substrate (10), lower-layer electrode wires (15) provided on the substrate (11), an interlayer insulating layer (16) which is disposed on the substrate (11) including the lower-layer electrode wires (15) and is provided with contact holes at locations respectively opposite to the lower-layer electrode wires (15), resistance variable layers (18) which are respectively connected to the lower-layer electrode wires (15); and non-ohmic devices (20) which are respectively provided on the resistance variable layers (18) such that the non-ohmic devices are respectively connected to the resistance variable layers (18). The non-ohmic devices (20) each has a laminated-layer structure including plural semiconductor layers, a laminated-layer structure including a metal electrode layer and an insulator layer, or a laminated-layer structure including a metal electrode layer and a semiconductor layer. One layer of the laminated-layer structure is embedded to fill each of the contact holes and the semiconductor layer or the insulator layer which is the other layer of the laminated-layer structure has a larger area than an opening of each of the contact holes and is provided on the interlayer insulating layer (16).
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