发明名称 |
Curing low-k dielectrics for improving mechanical strength |
摘要 |
An integrated circuit structure including reflective metal pads is provided. The integrated circuit structure includes a semiconductor substrate; a first low-k dielectric layer overlying the semiconductor substrate, wherein the first low-k dielectric layer is a top low-k dielectric layer; a second low-k dielectric layer immediately underlying the first low-k dielectric layer; and a reflective metal pad in the second low-k dielectric layer.
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申请公布号 |
US8258629(B2) |
申请公布日期 |
2012.09.04 |
申请号 |
US20080060999 |
申请日期 |
2008.04.02 |
申请人 |
LIOU JOUNG-WEI;LIN KENG-CHU;JENG SHWANG-MING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIOU JOUNG-WEI;LIN KENG-CHU;JENG SHWANG-MING |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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