发明名称 Photomask defect correcting method and device
摘要 A photomask defect correction method for correcting a defect of a photomask. A defect in a portion of a photomask to be corrected is observed and information of the observed defect for performing correction of the defect is acquired. The observed defect is corrected in accordance with the acquired defect information by irradiating the observed defect with a focused ion beam from an ion beam irradiation system having a gas field ion source that generates rare gas ions for forming the focused ion beam.
申请公布号 US8257887(B2) 申请公布日期 2012.09.04
申请号 US20080733090 申请日期 2008.08.06
申请人 TAKAOKA OSAMU;SII NANOTECHNOLOGY INC. 发明人 TAKAOKA OSAMU
分类号 G03F1/72;G03F1/00;G03F1/74 主分类号 G03F1/72
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