发明名称 |
Semiconductor memory device and method for driving semiconductor memory device |
摘要 |
A semiconductor memory device includes a plurality of memory cell transistors arranged in a matrix; a plurality of word lines commonly coupling the control gates of the plural memory cell transistors present in a identical first direction; a plurality of source lines commonly coupling the sources of the plural memory cell transistors present in the identical first direction; a plurality of bit lines commonly coupling the drains of the plural memory cell transistors present in a identical second direction intersecting the first direction; a first transistor having a drain coupled to the source line; a second transistor having a drain coupled to a source of the first transistor, a gate coupled to the word line and a source grounded; and a control line commonly coupling the gates of the plural first transistors. |
申请公布号 |
US8259495(B2) |
申请公布日期 |
2012.09.04 |
申请号 |
US201113197280 |
申请日期 |
2011.08.03 |
申请人 |
TORII SATOSHI;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
TORII SATOSHI |
分类号 |
G11C11/34;G11C5/06;G11C16/04;G11C16/06 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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