| 摘要 |
The method of manufacturing a semiconductor memory includes a process of forming a projection by performing an insulator forming process on the exposed side surface of a reactive conductive material and a non-reactive conductive material that are stacked above a substrate so as to change a predetermined length of the side surface of the reactive conductive material into an insulator, and thereby causing the side surface of the non-reactive conductive material to project outward from the side surface of the reactive its conductive material. The insulator forming process is an oxidation process or a nitridation process, the reactive conductive material is a material that reacts chemically and changes into the insulator in the oxidation process or nitridation process, and the non-reactive conductive material is a material that does not change into the insulator in the oxidation process or nitridation process.
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