Methods of forming metal patterns in openings in semiconductor devices

摘要

A method of forming a semiconductor device is disclosed. A dielectric layer having a opening therein is formed on a semiconductor substrate. An inner surface of the opening is treated by plasma. A barrier metal layer is formed on the plasma-treated inner surface of the opening. A seed layer is formed on the barrier metal layer. A metal bulk layer is formed on the seed layer. High quality semiconductor devices can be fabricated by using these methods, which may stably fill the opening formed in the dielectric layer.