发明名称 Etchant for etching metal wiring layers and method for forming thin film transistor by using the same
摘要 The present invention discloses an etchant for etching at least two different metal layers, the etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—). The present invention also discloses a method of fabricating a metal wiring on a substrate, the method comprising forming a first metal layer on a substrate, forming a second metal layer on the first metal layer, and simultaneously etching the first metal layer and the second metal layer with an etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—).
申请公布号 US8257609(B2) 申请公布日期 2012.09.04
申请号 US20050318506 申请日期 2005.12.28
申请人 CHAE GEE SUNG;JO GYOO CHUL;HWANG YONG SUP;LG DISPLAY CO., LTD. 发明人 CHAE GEE SUNG;JO GYOO CHUL;HWANG YONG SUP
分类号 C09K13/00;H01L21/3063;C23F1/18;C23F1/26;G02F1/1333;H01L21/3213;H01L21/336;H01L29/45;H01L29/49 主分类号 C09K13/00
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