MANUFACTURING METHOD FOR THIN FILM OF POLY-CRYSTALLINE SILICON

摘要

PURPOSE: A method for manufacturing a poly-crystal silicon thin film is provided to form a crystalline silicon layer having enough thickness for forming a solar battery by arranging a metallic catalyst atom inside an amorphous silicon layer. CONSTITUTION: A first insulation layer(20) is formed on a substrate(10). A second silicon layer(50) is formed on the first insulation layer. A second insulation layer(55) is formed on the second silicon layer. A second metal layer(60) is formed on the second insulation layer. A second metal oxide layer(65) is formed on the second metal layer through heat treatment. A third silicon layer(70) is formed on the second metal oxide layer. A second silicide oxide layer is formed by moving a metallic catalyst atom from the second metal layer to the third silicon layer. A fourth silicon layer is formed on the second silicide oxide layer.