发明名称 CONTENT ADDRESSABLE MEMORY
摘要 PURPOSE: A content addressable memory is provided to reduce power consumption by preventing power from being supplied to memory blocks which are not used. CONSTITUTION: A spin MOSFET pair includes a first spin MOSFET(40) and a second spin MOSFET(50) which is connected in parallel to the first spin MOSFET. The magnetization states of the first and second spin MOSFETs are set according to memory data. A first wire applies a gate voltage to conduct one of the first and second spin MOSFETs according to search data. A second wire applies currents to the first and second MOSFETs.
申请公布号 KR20120097337(A) 申请公布日期 2012.09.03
申请号 KR20120018523 申请日期 2012.02.23
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MARUKAME TAKAO;INOKUCHI TOMOAKI;SUGIYAMA HIDEYUKI;ISHIKAWA MIZUE;SAITO YOSHIAKI;KINOSHITA ATSUHIRO;TATSUMURA KOSUKE
分类号 G11C15/00 主分类号 G11C15/00
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