SEMICONDUCTOR COMPONENT HAVING A TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device having a transistor and a manufacturing method thereof are provided to reduce the number of manufacturing steps and production costs by directly forming a source electrode and a drain electrode of the semiconductor device on a channel having high carrier mobility. CONSTITUTION: A carrier substrate(10) is provided. A metal oxide semiconductor layer(11) is formed on the carrier substrate. A dielectric layer(12) is formed on the metal oxide semiconductor layer. A patterned mask layer(13') is formed on the dielectric layer. The dielectric layer is removed to form a plurality of dielectric layer holes(120).