| 发明名称 |
Thermoelectric anisotropic material on base of bismuth |
| 摘要 |
The invention relates to electronic equipment and can be used for the manufacture of termoelectrodes for thermoelectric generators.The thermoelectric anisotropic material on base of bismuth, according to the invention, consists of tin-doped bismuth, where the concentration of tin is 0.155 at. %, at the same time the material is made as a microwire in glass molybdenum insulation. |
| 申请公布号 |
MD542(Y) |
申请公布日期 |
2012.08.31 |
| 申请号 |
MDS20120008 |
申请日期 |
2012.01.13 |
| 申请人 |
INSTITUTUL DE INGINERIE ELECTRONICA SI NANOTEHNOLOGII "D. GHITU" AL ASM;INSTITUTUL DE INGINERIE ELECTRONIC&ABREVE,&SCEDIL,I NANOTEHNOLOGII "D. GHI&TCEDIL,U" AL A&SCEDIL,M |
发明人 |
NIKOLAEVA ALBINA;BODYUL PAVEL;KONOPKO LEONID;TURCAN ANA;BODIUL PAVEL;&TCEDIL,URCAN ANA |
| 分类号 |
C22C12/00;C30B29/52;C30B29/62;H01B13/06;H01L35/18;H01L35/28 |
主分类号 |
C22C12/00 |
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