| 摘要 |
<p>PURPOSE: A method for forming a contact hole in a semiconductor device is provided to prevent a contact hole from being abnormally formed by forming a third sacrificial pattern on a contact hole non-forming region which is contiguous to the contact hole forming region. CONSTITUTION: An etched layer and a hard mask film are successively formed on a substrate. A first sacrificial pattern is formed on the hard mask film of a first region on the substrate. A second sacrificial pattern is formed on the hard mask film of a second region on the substrate. A third sacrificial pattern(26) having a spacer shape is formed on sidewalls of the first and second sacrificial patterns. A fourth sacrificial pattern(27) is formed on the hard mask film of the second region. A hard mask pattern is formed using third and fourth sacrificial patterns as an etch barrier. An etched layer is etched using the hard mask pattern as the etch barrier.</p> |
