GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A GaN(Gallium Nitride) substrate and a manufacturing method thereof are provided to improve crystallizability since threading dislocation which is generated from a GaN interface and a support substrate reduces due to collision. CONSTITUTION: An uneven portion(130) is formed on a substrate(100). A first nitride gallium layer(220) is created by growing and mixing nitride gallium layers having different first and second directivities on the substrate. A second nitride gallium layer(300) is formed on the first nitride gallium layer and has the directivity of [1-101]. A protrusion part is formed on a lower portion of the nitride gallium layer having the first directivity due to different growth speed of the nitride gallium layer having the first and second directivities.