发明名称 |
VERTICAL FLOATING BODY STORAGE TRANSISTORS FORMED IN BULK DEVICES AND HAVING BURIED SENSE AND WORD LINES |
摘要 |
A semiconductor device comprises a memory area including floating body transistors in the form of pillar structures, which are formed in a bulk architecture. The pillar structures may be appropriately addressed on the basis of a buried word line and a buried sense region or sense lines in combination with an appropriate bit line contact regime.
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申请公布号 |
US2012217612(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201213404759 |
申请日期 |
2012.02.24 |
申请人 |
BAARS PETER;SCHLOESSER TILL;GLOBALFOUNDRIES INC. |
发明人 |
BAARS PETER;SCHLOESSER TILL |
分类号 |
H01L29/06;H01L21/762 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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