SILICON NITRIDE FILM DEPOSITION METHOD, ORGANIC ELECTRONIC DEVICE MANUFACTURING METHOD, AND SILICON NITRIDE FILM DEPOSITION DEVICE

摘要

A silicon nitride film deposition method for depositing a silicon nitride film on a substrate housed in a processing vessel, wherein a processing gas containing a silane gas, a nitrogen gas and a hydrogen gas is supplied to the processing vessel, plasma is generated by exciting the processing gas, and a silicon nitride film is deposited on the substrate by means of plasma processing with said plasma. The silicon nitride film is used as a sealing film of an organic electronic device. During the plasma processing with said plasma, the pressure inside the processing vessel is maintained between 20-60Pa.