| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the technical problem in microfabrication of a photomask and semiconductor element using an electron ray or extreme ultraviolet radiation, especially providing a chemically amplified resist composition that satisfies high sensitivity, high resolution (for instance, high resolution power, excellent pattern shape and small line edge roughness (LER)) and excellent dry etching resistance simultaneously, and a resist film, a resist-coated mask blank, a resist pattern forming method and a photomask, and a high molecular compound. <P>SOLUTION: A chemically amplified resist composition contains (A) a high molecular compound having a structure in which hydrogen atom of a phenolic hydroxyl group is substituted for a group having a non-acid decomposable polycyclic alicyclic hydrocarbon structure and (B) a compound generating acid by irradiation of an actinic ray or radiation. <P>COPYRIGHT: (C)2012,JPO&INPIT |
