发明名称 RADIATION DETECTOR, METHOD OF MANUFACTURING RADIATION DETECTOR, AND APPARATUS COMPRISING RADIATION DETECTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. <P>SOLUTION: The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths of 10 to 200 nm and/or charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area on a first surface side with a doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of a dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area on the first surface side of the silicon substrate. The first electrode is connected to the dopant layer. The second electrode is connected to the silicon substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012165021(A) 申请公布日期 2012.08.30
申请号 JP20120115353 申请日期 2012.05.21
申请人 ASML NETHERLANDS BV 发明人 NIHTIANOV STOYAN;VAN DER SIJS ARIE JOHAN;MOEST BEARRACH;KEMPER PETRUS WILHELMUS JOSEPH MARIA;HAAST MARC ANTONIUS MARIA;BAAS GERARDUS WILHELMUS PETRUS;NANVER LIS KAREN;SARUBBI FRANCESCO;SCHUWER ANTONIUS ANDREAS JOHANNES;GOMMEREN GREGORY MICHA;POT MARTIJN;SCHOLTES THOMAS LUDOVICUS MARIA
分类号 H01L21/027;H01L31/10 主分类号 H01L21/027
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