| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a capacity coupling type etching apparatus capable of improving in-plane uniformity. <P>SOLUTION: An etching apparatus 1 includes: a vacuum tank 10; a gas supply part 10e which supplies etching gas into the vacuum tank; a flat plate-shaped stage electrode 13 which is disposed in the vacuum tank and has a substrate Sb placed on the upper surface thereof; a flat plate-shaped upper electrode plate 17 which is opposite to the stage electrode 13 via a plasma generation space S; a high frequency power source 20 which supplies high-frequency power to the stage electrode 13; and a magnetic coil group 30 which is constituted of three annular magnetic coils 31 to 33 having diameters different from each other and provided on the upper side of the vacuum tank 10 so that centers of their magnetic coils 31 to 33 become coaxial, and in which the diameter of the outermost magnetic coil 31 is larger than that of the substrate Sb, the diameter of the central magnetic coil 32 is equal to or less than that of the substrate Sb and a magnetic neutral line NL is generated in the plasma generation space S. <P>COPYRIGHT: (C)2012,JPO&INPIT |
