| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide organic thin-film transistor insulation layer material capable of being used for manufacturing an organic thin-film transistor small in absolute value of a threshold voltage and hysteresis. <P>SOLUTION: Organic thin-film transistor insulation layer material contains a high molecular compound (A) having a repeating unit including a substituted maleimide group and a repeating unit containing a first functional group, in which the first functional group is a functional group generating a second functional group, which reacts an active hydrogen, caused by irradiation with electromagnetic wave or heat. <P>COPYRIGHT: (C)2012,JPO&INPIT |
