发明名称 |
TEST CIRCUIT, SEMICONDUCTOR MEMORY APPARATUS USING THE SAME, AND TEST METHOD OF THE SEMICONDUCTOR MEMORY APPARATUS |
摘要 |
A test circuit of a semiconductor memory apparatus includes: a test control signal generating unit configured to enable a control signal if an active signal is enabled after a test signal is enabled, and substantially maintain the control signal in an enable state until a precharge timing signal is enabled; and a precharge control unit configured to invert the control signal to output the inverted signal as a bit line precharge signal when a preliminary bit line precharge signal is in a disable state. |
申请公布号 |
US2012218846(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201213463609 |
申请日期 |
2012.05.03 |
申请人 |
KANG YONG GU;SK HYNIX INC. |
发明人 |
KANG YONG GU |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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