发明名称 TEST CIRCUIT, SEMICONDUCTOR MEMORY APPARATUS USING THE SAME, AND TEST METHOD OF THE SEMICONDUCTOR MEMORY APPARATUS
摘要 A test circuit of a semiconductor memory apparatus includes: a test control signal generating unit configured to enable a control signal if an active signal is enabled after a test signal is enabled, and substantially maintain the control signal in an enable state until a precharge timing signal is enabled; and a precharge control unit configured to invert the control signal to output the inverted signal as a bit line precharge signal when a preliminary bit line precharge signal is in a disable state.
申请公布号 US2012218846(A1) 申请公布日期 2012.08.30
申请号 US201213463609 申请日期 2012.05.03
申请人 KANG YONG GU;SK HYNIX INC. 发明人 KANG YONG GU
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
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