SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce faults generated in a heat sink.

SOLUTION: A semiconductor device comprises: a semiconductor substrate having first and second surfaces and a via hole penetrating through the first and second surfaces; a wire or an electrode formed on the first surface so as to be overlapped with an opening of the via hole at least partially; a stress buffer layer formed on the second surface and having an opening overlapped with the opening of the via hole at least partially; and a heat sink extended from on the stress buffer layer along an inner wall surface of the via hole and electrically connected to the wire or the electrode. A size of the opening of the via hole on the second surface is larger than that on the first surface. A thermal expansion coefficient of the stress buffer layer is less than that of the heat sink.

COPYRIGHT: (C)2012,JPO&INPIT