EMBEDDED SEMICONDUCTOR DEVICE INCLUDING PHASE CHANGE RANDOM ACCESS MEMORY ELEMENT STORING INTRINSIC CHIP DATA AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: An embedded semiconductor device having a phase change random access memory element and a manufacturing method thereof are provided to prevent intrinsic chip data being lost during testing a thermal stability because a memory layer of a sub-memory element is formed with materials having thermal stability more excellent than a memory layer of a main memory element. CONSTITUTION: Semiconductor chips having a main memory element and sub-memory element are integrated on a substrate(S1). An intrinsic chip data is prepared by electrically testing the conductive chips(S21). The intrinsic chip data is recorded in a sub-memory element(S22). Thermal stability test of the each semiconductor chip are performed(S23). The semiconductor chips are packaged(S3).