NONVOLATILE RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PURPOSE: A nonvolatile resistive memory device and a manufacturing method thereof are provided to improve a memory retention property by preventing interface trap deterioration. CONSTITUTION: A resistance changeable layer(220) is formed on a first electrode layer. An electric charge fixed layer(230) is formed on the resistance changeable layer and is formed by a carbon nano tube. An insulation layer(240) is formed on the electric change fixed layer and a second electrode layer(250) is formed on the insulation layer.