| 发明名称 |
PASTE FOR JOINTING AND METHOD FOR JOINTING SEMICONDUCTOR DEVICE AND SUBSTRATE |
| 摘要 |
<p>PURPOSE: Paste for junction and a junction method for a semiconductor device and a substrate are provided to prevent the generation of voids at joint by implementing junction at low temperatures of about 200°C. CONSTITUTION: A junction method for a semiconductor device and a substrate comprises the steps of: preparing a substrate(1), applying junction paste(2) on the substrate, drying the paste on the substrate at a temperature of 80-110°C so that the paste is transformed into a sintered body(20) of metal nano particles, and mounting a semiconductor device(3) on the paste.</p> |
| 申请公布号 |
KR20120096429(A) |
申请公布日期 |
2012.08.30 |
| 申请号 |
KR20120016950 |
申请日期 |
2012.02.20 |
| 申请人 |
MITSUBISHI MATERIALS CORP. |
发明人 |
HAYASHI YOSHIMASA;MAWATARI FUYUMI;MATUURA TAISHI;YAMASAKI KAZUHIKO |
| 分类号 |
H05K3/34;B23K31/02;B23K101/42;H01L21/52 |
主分类号 |
H05K3/34 |
| 代理机构 |
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