| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique capable of improving a film forming speed in pre-sputtering and in the following sputtering to a substrate or the like using an Al-based alloy sputtering target or a Cu-based sputtering target and also suppressing sputtering failure such as a splash. <P>SOLUTION: When the total area rate of crystal orientations <001>±15°, <011>±15°, <111>±15°, <112>±15° and <012>±15° in the normal direction of the sputtering face in the depth within 1 mm from the outermost surface of the Al-based alloy or the Cu-based alloy sputtering target is defined as a P value, the sputtering target satisfies the requirement of the following (1) and/or (2), wherein (1) the area rate PA of <011>±15° with respect to the P value is 40% or less, and (2) the total area rate PB of <001>±15° and <111>±15° with respect to the P value is 20% or more. <P>COPYRIGHT: (C)2012,JPO&INPIT |
