| 摘要 |
A semiconductor apparatus includes a substrate, a semiconductor layer formed above the substrate and including a nitride semiconductor, an electrode formed above the semiconductor layer and including gold, a barrier film formed above the electrode and a protection film formed above the semiconductor layer and including one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film. The protection film is formed on the barrier film. The barrier film includes a metal oxide material, a metal nitride film, or a metal oxynitride film.
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