发明名称 BULK ACOUSTIC WAVE RESONATOR COMPRISING BRIDGE FORMED WITHIN PIEZOELECTRIC LAYER
摘要 A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.
申请公布号 US2012218060(A1) 申请公布日期 2012.08.30
申请号 US201113208909 申请日期 2011.08.12
申请人 BURAK DARIUSZ;NIKKEL PHIL;KAITILA JYRKI;LARSON, III JOHN D.;SHIRAKAWA ALEXANDRE;AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD. 发明人 BURAK DARIUSZ;NIKKEL PHIL;KAITILA JYRKI;LARSON, III JOHN D.;SHIRAKAWA ALEXANDRE
分类号 H03H9/56 主分类号 H03H9/56
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