发明名称 |
BULK ACOUSTIC WAVE RESONATOR COMPRISING BRIDGE FORMED WITHIN PIEZOELECTRIC LAYER |
摘要 |
A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer. |
申请公布号 |
US2012218060(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201113208909 |
申请日期 |
2011.08.12 |
申请人 |
BURAK DARIUSZ;NIKKEL PHIL;KAITILA JYRKI;LARSON, III JOHN D.;SHIRAKAWA ALEXANDRE;AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD. |
发明人 |
BURAK DARIUSZ;NIKKEL PHIL;KAITILA JYRKI;LARSON, III JOHN D.;SHIRAKAWA ALEXANDRE |
分类号 |
H03H9/56 |
主分类号 |
H03H9/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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