发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
A semiconductor device manufacturing method includes: forming a core layer, an anti-reflection film and a photoresist layer on a layer to be etched of a substrate; trimming first line patterns of the photoresist layer; forming a first film on the first line patterns; removing the first film such that the first film is left in sidewall portions of the first line patterns of the photoresist layer; removing the photoresist layer; producing the core layer into second line patterns by etching the anti-reflection film and the core layer; forming a second film on the core layer produced into the second line patterns; removing the second film such that the second film is left in sidewall portions of the second line patterns of the core layer; and producing the layer to be etched into third line patterns by etching the layer to be etched. |
申请公布号 |
US2012220132(A1) |
申请公布日期 |
2012.08.30 |
申请号 |
US201213403604 |
申请日期 |
2012.02.23 |
申请人 |
OYAMA KENICHI;YAMAUCHI SHOHEI;YAEGASHI HIDETAMI;TOKYO ELECTRON LIMITED |
发明人 |
OYAMA KENICHI;YAMAUCHI SHOHEI;YAEGASHI HIDETAMI |
分类号 |
H01L21/32 |
主分类号 |
H01L21/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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